STB11NM65N STMicroelectronics
STB11NM65N
Manufacturer Part Number
STB11NM65N
Description
MOSFET N-Channel 650V Pwr Mosfet
Manufacturer
STMicroelectronics
Specifications of STB11NM65N
Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
12 A
Resistance Drain-source Rds (on)
0.38 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Fall Time
20 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
125 W
Rise Time
13 ns
Factory Pack Quantity
1000
Typical Turn-off Delay Time
55 ns
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