SI1024X-T1 Vishay/Siliconix, SI1024X-T1 Datasheet - Page 4

• Manufacturer Part Number: SI1024X-T1
• Description: MOSFET 20V 0.6A
• Manufacturer: Vishay/Siliconix

Specifications of SI1024X-T1

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.485 A
• Resistance Drain-source Rds (on): 0.70 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-563-6
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 250 mW
• Factory Pack Quantity: 3000
• Tradename: TrenchFET

Si1024X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71170.
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
- 0.1
- 0.2
- 0.3
0.1
0.3
0.2
0.1
0.0
2
1
10
- 50
Threshold Voltage Variance vs. Temperature
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
0
T
10
J
Single Pulse
- Temperature (°C)
-3
25
Normalized Thermal Transient Impedance, Junction-to-Ambient
I
D
50
= 0.25 mA
7
6
5
4
3
2
1
0
- 50
10
A
75
This document is subject to change without notice.
-2
= 25 °C, unless otherwise noted)
- 25
100
BV
Square Wave Pulse Duration (s)
0
125
T
GSS
J
10
- Temperature (°C)
-1
vs. Temperature
25
50
75
1
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
- 50
125
- 25
1
V
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
GS
P
DM
JM
= 4.5 V
- T
I
0
GSS
A
t
T
1
= P
J
t
- Temperature (°C)
2
DM
vs. Temperature
25
Z
thJA
thJA
100
S11-0854-Rev. E, 02-May-11
t
t
1
2
(t)
Document Number: 71170
= 500 °C/W
www.vishay.com/doc?91000
50
75
6
0
0
100
125