SI1557DH-T1 Vishay/Siliconix, SI1557DH-T1 Datasheet - Page 4

• Manufacturer Part Number: SI1557DH-T1
• Description: MOSFET N/P-Ch 12V 1.0/0.56A
• Manufacturer: Vishay/Siliconix

Specifications of SI1557DH-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.3 A, 0.86 A
• Resistance Drain-source Rds (on): 0.235 Ohms at 4.5 V, 0.535 Ohms at - 4.5 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 10 nS, 10 nS
• Forward Transconductance Gfs (max / Min): 0.8 S, 1.2 S
• Gate Charge Qg: 0.8 nC, 1.1 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 600 mW
• Rise Time: 25 nS, 30 nS
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 25 nS, 15 nS

Si1557DH
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
- 0.3
- 0.4
0.0
0.2
0.1
0.1
4
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
J
25
- Temperature (°C)
T
J
= 150 °C
0.6
50
I
D
= 100 µA
75
0.8
T
0.01
0.1
J
10
100
= 25 °C
1
0.1
Safe Operating Area, Junction-to-Ambient
1.0
* V
125
by R
GS
Limited
I
D
Limited
>
DS(on)
V
Single Pulse
150
minimum V
1.2
T
DS
A
= 25 °C
*
- Drain-to-Source Voltage (V)
1
GS
Limited
BVDSS
at which R
10
DS(on)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
5
4
3
2
1
0
10
1 s, 10 s, DC
1 ms
10 ms
100 ms
0
I
is specified
DM
-3
On-Resistance vs. Gate-to-Source Voltage
Limited
I
D
10
= 0.2 A
-2
1
100
V
GS
Single Pulse Power
10
- Gate-to-Source Voltage (V)
-1
I
D
2
= 1.2 A
Time (s)
S10-1054-Rev. C, 03-May-10
1
Document Number: 71944
3
10
4
100
600
5