IRFP450-EPBF Vishay/Siliconix, IRFP450-EPBF Datasheet - Page 3

• Manufacturer Part Number: IRFP450-EPBF
• Description: MOSFET N-Chan 500V 14 Amp
• Manufacturer: Vishay/Siliconix

Specifications of IRFP450-EPBF

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Resistance Drain-source Rds (on): 0.4 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Fall Time: 44 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 190 W
• Rise Time: 47 ns
• Factory Pack Quantity: 500
• Typical Turn-off Delay Time: 92 ns

IRFP450, SiHFP450
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, T
= 25 °C
Fig. 3 - Typical Transfer Characteristics
C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
C
Document Number: 91233
www.vishay.com
S-81271-Rev. A, 16-Jun-08
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