IRFP460PPBF Vishay/Siliconix, IRFP460PPBF Datasheet - Page 3

• Manufacturer Part Number: IRFP460PPBF
• Description: MOSFET N-Chan 500V 20 Amp
• Manufacturer: Vishay/Siliconix

Specifications of IRFP460PPBF

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Resistance Drain-source Rds (on): 0.27 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Fall Time: 58 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 280 W
• Rise Time: 59 ns
• Factory Pack Quantity: 500
• Typical Turn-off Delay Time: 110 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91237
S-81360-Rev. A, 28-Jul-08
91237_01
91237_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
0
0
1
1
10
10
Bottom
Top
Top
Bottom
0
0
V
V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
15 V
10 V
DS
DS ,
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
10
10
1
1
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
25 °C
150 °C
C
C
4.5 V
4.5 V
= 150 °C
= 25 °C
91237_03
91237_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1
- 60 - 40 - 20
4
Fig. 3 - Typical Transfer Characteristics
I
V
D
150
GS
= 20 A
= 10 V
25
°
V
C
5
GS ,
°
T
C
J ,
Gate-to-Source Voltage (V)
0 20
Junction Temperature (°C)
IRFP460, SiHFP460
6
40 60 80 100 120 140 160
7
20 µs Pulse Width
V
Vishay Siliconix
DS
8
=
50 V
9
www.vishay.com
10
3