STI11NM65N STMicroelectronics

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STI11NM65N

Manufacturer Part Number

STI11NM65N

Description

MOSFET N-Channel 600V Pwr Mosfet

Manufacturer

STMicroelectronics

Specifications of STI11NM65N

Product Category

MOSFET

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

650 V

Gate-source Breakdown Voltage

+/- 25 V

Continuous Drain Current

12 A

Resistance Drain-source Rds (on)

0.38 Ohms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-262

Fall Time

20 ns

Minimum Operating Temperature

- 55 C

Power Dissipation

125 W

Rise Time

13 ns

Typical Turn-off Delay Time

55 ns

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