SI7445DP-T1 Vishay/Siliconix, SI7445DP-T1 Datasheet - Page 4

• Manufacturer Part Number: SI7445DP-T1
• Description: MOSFET 20V 19A 5.4W
• Manufacturer: Vishay/Siliconix

Specifications of SI7445DP-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 12 A
• Resistance Drain-source Rds (on): 7.7 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Fall Time: 45 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.9 W
• Rise Time: 45 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 400 ns

Si7445DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, seem www.vishay.com/ppg?71626.
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
0.01
0.01
0.1
0.1
- 50
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
Duty Cycle = 0.5
0.2
0.1
Single Pulse
Single Pulse
0
T
Threshold Voltage
I
D
J
0.02
= 250 µA
- Temperature (
10
25
-3
0.05
50
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
75
°
C)
10
100
-2
125
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
150
-2
10
-1
200
160
120
10
80
40
1
0
0.001
-1
Single Pulse Power, Junction-to-Ambient
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Time (s)
- T
t
A
1
1
S09-0270-Rev. D, 16-Feb-09
= P
0.1
t
2
Document Number: 71626
DM
Z
thJA
100
thJA
t
t
1
2
(t)
= 65 °C/W
1
1 0
600
10