SI4482DY-T1 Vishay/Siliconix, SI4482DY-T1 Datasheet - Page 2
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SI4482DY-T1
Manufacturer Part Number
SI4482DY-T1
Description
MOSFET 100V 4.6A 2.5W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI4482DY-E3.pdf
(5 pages)
Specifications of SI4482DY-T1
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.6 A
Resistance Drain-source Rds (on)
60 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
25 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
2.5 W
Rise Time
12 ns
Factory Pack Quantity
2500
Tradename
TrenchFET
Typical Turn-off Delay Time
60 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4482DY-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4482DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 500
Part Number:
SI4482DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4482DY
Vishay Siliconix
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
a
b
b
b
J
= 25 °C, unless otherwise noted
b
Symbol
R
V
I
t
t
I
I
DS(on)
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
R
t
t
t
SD
rr
fs
gs
gd
r
f
g
g
V
V
DS
I
DS
D
I
≅ 1 A, V
= 100 V, V
F
= 50 V, V
V
V
V
V
V
= 2.1 A, dI/dt = 100 A/µs
V
V
DS
I
DS
DS
V
S
DD
DS
GS
DS
GS
Test Conditions
= 2.1 A, V
= 0 V, V
= V
= 100 V, V
= 5 V, V
= 50 V, R
= 10 V, I
= 15 V, I
= 6 V, I
GEN
GS
GS
GS
, I
= 10 V, R
= 10 V, I
GS
D
= 0 V, T
GS
D
D
D
GS
= 250 µA
L
= 4.0 A
GS
= ± 20 V
= 4.6 A
= 4.6 A
= 10 V
= 50 Ω
= 0 V
= 0 V
D
J
g
= 55 °C
= 4.6 A
= 6 Ω
Min.
20
2
1
0.045
0.050
Typ.
7.5
20
30
13
12
60
25
50
S09-0767-Rev. C, 04-May-09
7
a
Document Number: 70749
± 100
0.060
0.080
Max.
1.2
4.4
20
50
25
25
90
40
80
1
Unit
nA
µA
nC
ns
V
A
Ω
S
V
Ω