SI7415DN-T1 Vishay/Siliconix, SI7415DN-T1 Datasheet - Page 4

• Manufacturer Part Number: SI7415DN-T1
• Description: MOSFET 60V 5.7A 1.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI7415DN-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.6 A
• Resistance Drain-source Rds (on): 65 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212-8
• Fall Time: 12 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.5 W
• Rise Time: 12 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET/PowerPAK
• Typical Turn-off Delay Time: 22 ns

Si7415DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71691.
www.vishay.com
4
- 0.2
- 0.4
0.8
0.6
0.4
0.2
0.0
- 50
0.01
0.01
0.1
0.1
2
1
2
1
10
10 -
- 25
-4
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
0
0.05
Threshold Voltage
I
T
D
J
= 250 µA
25
- Temperature (°C)
10
Single Pulse
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Normalized Thermal Transient Impedance, Junction-to-Case
10 -
3
100
10
-2
125
150
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10 -
2
50
40
30
20
10
1
0
0.01
Single Pulse Power, Junction-to-Ambient
0.1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10 -
P
DM
JM
1
-
1
Time (s)
T
t
1
A
= P
t
S-83043-Rev. E, 22-Dec-08
2
Document Number: 71691
DM
Z
thJA
10
100
thJA
t
t
1
2
(t)
= 65 °C/W
100
600
1
600