VS-180RKI100PBF Vishay Semiconductors, VS-180RKI100PBF Datasheet - Page 2

• Manufacturer Part Number: VS-180RKI100PBF
• Description: SCRs 180 Amp 1000 Volt 285 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-180RKI100PBF

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 4000 A
• Rated Repetitive Off-state Voltage Vdrm: 1000 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 1.35 V
• Gate Trigger Voltage (vgt): 2.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 150 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-93
• Factory Pack Quantity: 12

180RKI...PbF, 181RKI...PbF Series
Vishay High Power Products
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of
rise of off-state voltage
Maximum peak reverse and
off-state leakage current
2
2
t for fusing
√t for fusing
For technical questions, contact:
SYMBOL
SYMBOL
SYMBOL
V
V
dV/dt
dI/dt
I
I
I
I
I
T(TO)1
T(TO)2
V
RRM,
T(AV)
I
DRM
RMS
TSM
I
2
r
r
t
t
I
I
2
TM
t1
t2
H
d
q
√t
L
Phase Control Thyristors
t
(Stud Version), 180 A
180° conduction, half sine wave
DC at 79 °C case temperature
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
I
T
Gate drive 20 V, 20 Ω, t
T
Gate current 1 A, dI
V
I
V
T
T
TM
pk
J
J
d
R
J
J
= 25 °C, anode supply 12 V resistive load
= T
= T
= T
= 0.67 % V
= 570 A, T
= 100 V, dV/dt = 20 V/μs
= 50 A, T
J
J
J
maximum, anode voltage ≤ 80 % V
maximum linear to 80 % rated V
maximum rated V
T(AV)
T(AV)
[e-mail]
), T
), T
J
J
DRM
= T
T(AV)
T(AV)
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
J
= T
J
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
= T
= T
J
, T
J
< I < π x I
< I < π x I
maximum, dI/dt = 10 A/μs,
maximum, t
g
J
J
J
/dt = 1 A/μs
maximum
maximum
= 25 °C
r
RRM
RRM
≤ 1 μs
DRM
T(AV)
T(AV)
/V
Sinusoidal half wave,
intial T
RRM
p
), T
), T
= 10 ms sine pulse
J
J
applied
= T
= T
J
= T
DRM
J
J
maximum
maximum
J
DRM
maximum
Document Number: 94382
VALUES
VALUES
VALUES
Revision: 03-Nov-09
3800
4000
3500
3660
1000
0.83
0.89
0.92
0.81
1.35
300
100
500
180
285
720
600
1.0
30
80
72
66
61
56
UNITS
UNITS
UNITS
kA
kA
A/μs
V/μs
mΩ
mA
mA
°C
μs
A
A
V
V
2
2
√s
s