VS-ST303C08CFL1 Vishay Semiconductors, VS-ST303C08CFL1 Datasheet - Page 7

• Manufacturer Part Number: VS-ST303C08CFL1
• Description: SCR Modules 620 Amp 800 Volt 1180 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST303C08CFL1

• Product Category: SCR Modules
• On-state Rms Current (it Rms): 1180 A
• Non Repetitive On-state Current: 7950 A
• Breakover Current Ibo Max: 8320 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• On-state Voltage: 2.16 v
• Holding Current (ih Max): 600 mA
• Gate Trigger Voltage (vgt): 3 V
• Gate Trigger Current (igt): 200 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: TO-200AB (E-PUK)
• Circuit Type: SCR
• Current Rating: 620 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 12

Document Number: 94373
Revision: 25-Jul-08
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Snubber circuit
R
C
V
s
s
D
= 10 Ω
= 0.47 µF
= 80 % V
100
0.1
10
1
2500
0.001
3000
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
t
p
2000
Pulse Basewidth (µs)
DRM
rated dI/dt: 20 V, 10 Ω; t
≤ 30 % rated dI/dt: 10 V, 10 Ω
t
Pulse Basewidth (µs)
r
100
1500
≤ 1 µs
100
ST303C..C Series
Sinusoidal pulse
400
1000
0.4
t
p
0.5
200
1
3
500
For technical questions, contact: [e-mail]
2
10
1000
ST303C..C Series
Trapezoidal pulse
T
dI/dt = 100 A/µs
0.01
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
C
1000
20 joules per pulse
= 40 °C
100
V
5
50 Hz
GD
r
Inverter Grade Thyristors
≤ 1 µs
I
GD
(PUK Version), 620 A
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Fig. 15 - Frequency Characteristics
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
0.1
Device: ST303C..C Series
(b)
(a)
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1
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1000
100
1000
100
10
10
Vishay High Power Products
Snubber circuit
R
C
V
10
D
s
s
= 10 Ω
= 0.47 µF
Frequency limited by P
= 80 % V
3000
t
2500
p
2000
0.5
(1) P
(2) P
(3) P
(4) P
1500
ST303CPbF Series
Pulse Basewidth (µs)
ST303C..C Series
Rectangular pulse
dI/dt = 50 A/µs
0.4
DRM
Pulse Basewidth (µs)
100
GM
GM
GM
GM
10
100
(1)
= 10 W, t
= 20 W, t
= 40 W, t
= 60 W, t
1000
500
1
400
2
t
p
(2)
G(AV)
p
p
p
p
3
= 20 ms
= 10 ms
= 5 ms
= 3.3 ms
1000
ST303C..C Series
Trapezoidal pulse
T
dI/dt = 100 A/µs
200
(3) (4)
C
1000
10
= 55 °C
20 joules per pulse
50 Hz
100
5
100
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