VS-ST303C08CFL1 Vishay Semiconductors, VS-ST303C08CFL1 Datasheet - Page 2

• Manufacturer Part Number: VS-ST303C08CFL1
• Description: SCR Modules 620 Amp 800 Volt 1180 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST303C08CFL1

• Product Category: SCR Modules
• On-state Rms Current (it Rms): 1180 A
• Non Repetitive On-state Current: 7950 A
• Breakover Current Ibo Max: 8320 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• On-state Voltage: 2.16 v
• Holding Current (ih Max): 600 mA
• Gate Trigger Voltage (vgt): 3 V
• Gate Trigger Current (igt): 200 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: TO-200AB (E-PUK)
• Circuit Type: SCR
• Current Rating: 620 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 12

ST303CPbF Series
Vishay High Power Products
www.vishay.com
2
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
Voltage before turn-on V
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
2
2
t for fusing
√t for fusing
r
d
For technical questions, contact: [e-mail]
1314
1260
900
340
40
SYMBOL
180° el
V
V
I
I
T(RMS)
I
T(AV)
V
T(TO)1
T(TO)2
TSM
10/0.47
I
I
r
r
I
I
2
2
TM
t1
t2
Inverter Grade Thyristors
H
L
V
t
√t
50
DRM
50
(PUK Version), 620 A
1130
1040
700
230
55
I
TM
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
I
t
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
T
T
TM
p
J
J
= 10 ms sine wave pulse
= 25 °C, I
= 25 °C, V
= 1255 A, T
T(AV)
T(AV)
2070
2190
1900
T
), T
), T
910
A
40
> 30 A
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
T(AV)
= 12 V, R
J
J
J
180° el
TEST CONDITIONS
= T
= T
= T
10/0.47
V
< I < π x I
< I < π x I
J
50
DRM
J
J
-
maximum,
maximum
maximum
RRM
RRM
a
= 6 Ω, I
1940
1880
1590
710
I
55
TM
T(AV)
T(AV)
Sinusoidal half wave,
initial T
), T
), T
G
= 1 A
J
J
J
= T
= T
= T
6930
3440
1850
J
J
J
740
40
maximum
maximum
maximum
100 µs
10/0.47
V
50
DRM
-
Document Number: 94373
6270
2960
1540
560
I
55
TM
620 (230)
VALUES
55 (85)
1180
7950
8320
6690
7000
3160
1000
Revision: 25-Jul-08
2.16
1.44
1.48
0.57
0.56
316
289
224
204
600
UNITS
Ω/µF
A/µs
°C
UNITS
A
V
klA
kA
mΩ
mA
°C
A
A
V
2
2
s
√s