VS-ST300C08C1 Vishay Semiconductors, VS-ST300C08C1 Datasheet - Page 3

• Manufacturer Part Number: VS-ST300C08C1
• Description: SCR Modules 650 Amp 800 Volt 1290 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST300C08C1

• Product Category: SCR Modules
• On-state Rms Current (it Rms): 1290 A
• Non Repetitive On-state Current: 8000 A
• Breakover Current Ibo Max: 8380 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• On-state Voltage: 2.18 V
• Holding Current (ih Max): 600 mA
• Gate Trigger Voltage (vgt): 3 V
• Gate Trigger Current (igt): 200 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: TO-200AB (E-PUK)
• Circuit Type: SCR
• Current Rating: 650 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 12

Note
• The table above shows the increment of thermal resistance R
Document Number: 94403
Revision: 11-Aug-08
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
ΔR
CONDUCTION ANGLE
thJ-hs
CONDUCTION
180°
120°
90°
60°
30°
SINGLE SIDE
SINUSOIDAL CONDUCTION
0.010
0.012
0.015
0.022
0.036
For technical questions, contact: [e-mail]
(Hockey PUK Version), 650 A
Phase Control Thyristors
DOUBLE SIDE
SYMBOL
SYMBOL
R
P
R
+ V
- V
P
V
V
T
thC-hs
0.011
0.012
0.015
0.022
0.036
G(AV)
I
thJ-hs
I
I
T
GM
GD
GT
GM
Stg
GT
GD
GM
J
GM
thJ-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
See dimensions - link at the end of datasheet
T
T
T
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
J
J
J
= T
= T
= T
= T
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
= T
when devices operate at different conduction angles than DC
SINGLE SIDE
RECTANGULAR CONDUCTION
J
J
J
J
J
maximum, t
maximum, f = 50 Hz, d% = 50
maximum, t
maximum, t
maximum
0.007
0.012
0.016
0.023
0.036
TEST CONDITIONS
TEST CONDITIONS
p
p
p
≤ 5 ms
≤ 5 ms
≤ 5 ms
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
cathode applied
DOUBLE SIDE
Vishay High Power Products
0.007
0.013
0.017
0.023
0.037
DRM
ST300CPbF Series
anode to
TEST CONDITIONS
T
J
= T
J
maximum
TYP. MAX.
TO-200AB (E-PUK)
200
100
- 40 to 125
- 40 to 150
2.5
1.8
1.1
50
VALUES
VALUES
(1000)
9800
0.09
0.04
0.02
0.01
10.0
10.0
0.25
2.0
3.0
5.0
83
20
www.vishay.com
200
3.0
-
-
-
-
UNITS
K/W
UNITS
UNITS
K/W
(kg)
mA
mA
°C
W
N
A
V
V
V
g
3