2N7002 T&R 3000 PCS Central Semiconductor, 2N7002 T&R 3000 PCS Datasheet

2N7002 T&R 3000 PCS

Manufacturer Part Number

2N7002 T&R 3000 PCS

Description

MOSFET N-Ch 5V .2A

Manufacturer

Central Semiconductor

Datasheet

1.2N7002_TR_3000_PCS.pdf (2 pages)

Specifications of 2N7002 T&R 3000 PCS

Product Category

MOSFET

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

40 V

Continuous Drain Current

115 mA

Resistance Drain-source Rds (on)

3.7 Ohms

Mounting Style

SMD/SMT

Package / Case

SOT-23

Forward Transconductance Gfs (max / Min)

0.08 S

Power Dissipation

350 mW

Factory Pack Quantity

3000

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MAXIMUM RATINGS: (T A =25°C)

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage

Continuous Drain Current (T C =25°C)

Continuous Drain Current (T C =100°C)

Continuous Source Current (Body Diode)

Maximum Pulsed Drain Current

Maximum Pulsed Source Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)

SYMBOL

I GSSF

I GSSR

I DSS

I D(ON)

BV DSS

V GS(th)

V DS(ON)

V SD

r DS(ON)

g FS

ENHANCEMENT-MODE

SURFACE MOUNT

SILICON MOSFET

TEST CONDITIONS

V GS =20V

V DS =60V, V GS =0

V DS =60V, V GS =0, T A =125°C

V DS =10V, V GS =10V

I D =10μA

V DS =V GS , I D =250μA

V GS =10V, I D =500mA

V GS =5.0V, I D =50mA

V GS =0, I S =11.5mA

V GS =10V, I D =500mA

V GS =10V, I D =500mA, T A =100°C

V GS =5.0V, I D =50mA

V GS =5.0V, I D =50mA, T A =100°C

V DS =10V, I D =200mA

SOT-23 CASE

N-CHANNEL

2N7002

SYMBOL

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N7002 type is a

N-Channel Field Effect Transistor, manufactured by the

N-Channel DMOS Process, designed for high speed

pulsed amplifier and driver applications.

MARKING CODE: 702

T J , T stg

V DG

V GS

V DS

I DM

Θ JA

MIN

I SM

500

P D

1.0

I D

I S

TYP

105

2.1

3.7

6.2

-65 to +150

115

800

350

357

0.375

MAX

3.75

13.5

100

500

1.0

2.5

1.5

7.5

w w w. c e n t r a l s e m i . c o m

R5 (31-January 2011)

UNITS

°C/W

μA

°C

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2N7002 T&R 3000 PCS Summary of contents

Page 1

... =10V =200mA DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. MARKING CODE: 702 ...

Page 2

SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET ELECTRICAL CHARACTERISTICS - Continued =25°C unless otherwise noted) SYMBOL TEST CONDITIONS C rss V DS =25V =0, f=1.0MHz C iss V DS =25V =0, f=1.0MHz C oss ...

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