ALD1109EPAL Advanced Linear Devices, ALD1109EPAL Datasheet - Page 11

• Manufacturer Part Number: ALD1109EPAL
• Description: MOSFET Dual N-Ch Pair Array
• Manufacturer: Advanced Linear Devices

Specifications of ALD1109EPAL

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 10 V
• Gate-source Breakdown Voltage: 10.6 V
• Continuous Drain Current: 12 mA
• Resistance Drain-source Rds (on): 500 Ohms
• Mounting Style: Through Hole
• Package / Case: PDIP-8
• Forward Transconductance Gfs (max / Min): 0.0014 S
• Power Dissipation: 500 mW
• Factory Pack Quantity: 50

ALD110800/ALD110800A/ALD110900/ALD110900A
c
S
b
b
1
e
1
D
ø
e
A
E
A 2
1
PDIP-8 PACKAGE DRAWING
L
A
E 1
8 Pin Plastic DIP Package
Advanced Linear Devices
Dim
D-8
S-8
A
A
b
E
e
A
E
b
c
e
L
ø
1
1
1
1
2
3.81
0.38
1.27
0.89
0.38
0.20
9.40
5.59
7.62
2.29
7.37
2.79
1.02
Min
0°
Millimeters
11.68
Max
5.08
1.27
2.03
1.65
0.51
0.30
7.11
8.26
2.79
7.87
3.81
2.03
15°
0.105
0.015
0.050
0.035
0.015
0.008
0.370
0.220
0.300
0.090
0.290
0.110
0.040
Min
0°
Inches
0.200
0.050
0.080
0.065
0.020
0.012
0.460
0.280
0.325
0.110
0.310
0.150
0.080
11 of 11
Max
15°