ALD1109EPAL Advanced Linear Devices, ALD1109EPAL Datasheet - Page 10

• Manufacturer Part Number: ALD1109EPAL
• Description: MOSFET Dual N-Ch Pair Array
• Manufacturer: Advanced Linear Devices

Specifications of ALD1109EPAL

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 10 V
• Gate-source Breakdown Voltage: 10.6 V
• Continuous Drain Current: 12 mA
• Resistance Drain-source Rds (on): 500 Ohms
• Mounting Style: Through Hole
• Package / Case: PDIP-8
• Forward Transconductance Gfs (max / Min): 0.0014 S
• Power Dissipation: 500 mW
• Factory Pack Quantity: 50

ALD110800/ALD110800A/ALD110900/ALD110900A
S (45°)
e
S (45°)
D
L
H
b
A
A
E
1
C
SOIC-8 PACKAGE DRAWING
ø
8 Pin Plastic SOIC Package
Advanced Linear Devices
Dim
D-8
A
ø
A
C
E
H
S
b
e
L
1
1.35
0.10
0.35
0.18
4.69
3.50
5.70
0.60
0.25
Min
0°
Millimeters
1.27 BSC
0.937
Max
1.75
0.25
0.45
0.25
5.00
4.05
6.30
0.50
8°
0.053
0.004
0.014
0.007
0.185
0.140
0.224
0.024
0.010
Min
0°
0.050 BSC
Inches
0.069
0.010
0.018
0.010
0.196
0.160
0.248
0.037
0.020
10 of 11
Max
8°