BUK9606-40B /T3 NXP Semiconductors, BUK9606-40B /T3 Datasheet - Page 8

• Manufacturer Part Number: BUK9606-40B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9606-40B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 129 A
• Resistance Drain-source Rds (on): 0.005 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 92 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 203 W
• Rise Time: 145 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 132 ns
• Part # Aliases: BUK9606-40B,118

NXP Semiconductors
BUK9606-40B
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
(A)
I
D
a
100
1.5
0.5
75
50
25
0
2
1
0
−60
function of gate-source voltage; typical values
factor as a function of junction temperature
Transfer characteristics: drain current as a
0
0
1
T
j
= 175 °C
60
2
120
3
T
j
All information provided in this document is subject to legal disclaimers.
V
= 25 °C
GS
T
j
03nm16
( ° C)
03aa27
(V)
Rev. 02 — 1 February 2011
180
4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
R
V
(mΩ)
DSon
GS(th)
(V)
2.5
2.0
1.5
1.0
0.5
16
12
0
8
4
−60
junction temperature
of drain current; typical values
0
3
3.2 3.4 3.6
N-channel TrenchMOS logic level FET
0
100
3.8
BUK9606-40B
60
4
max
min
typ
Label is V
200
120
© NXP B.V. 2011. All rights reserved.
I
D
GS
T
(A)
j
03nm19
(°C)
10
(V)
03ng52
5
180
300
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