SUB75N08-09L-E3 Vishay/Siliconix, SUB75N08-09L-E3 Datasheet - Page 2

• Manufacturer Part Number: SUB75N08-09L-E3
• Description: MOSFET 75V 75A 250W
• Manufacturer: Vishay/Siliconix

Specifications of SUB75N08-09L-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 9 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263-3
• Fall Time: 22 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.7 W
• Rise Time: 10 ns
• Factory Pack Quantity: 800
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 107 ns

Notes
a.
b.
c.
www.vishay.com FaxBack 408-970-5600
2-2
SUP/SUB75N08-09L
Vishay Siliconix
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Z
Zero Gate Voltage Drain Current
On-State Drain Current
D i S
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
G
c
c
V l
b
O S
Parameter
a
c
D i C
c
c
c
c
a
R
i
a
300 s, duty cycle
a
a
a
Symbol
2%.
V
I
RM(REC)
V
r
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
I
I
C
GS(th)
D(on)
C
C
Q
V
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
SM
I
t
oss
t
rss
t
SD
iss
S
rr
fs
gs
gd
r
f
g
rr
New Product
C
I
I
V
V
D
V
V
V
V
V
DS
DS
= 25 C)
GS
GS
GS
DS
= 60 V, V
= 60 V, V
75 A V
75 A, V
I
I
= 30 V, V
V
= 10 V, I
= 10 V, I
= 0 V, V
V
V
F
V
V
V
V
V
V
V
DS
30 V V
DD
DD
= 75 A, di/dt = 100 A/ s
DS
DS
Test Condition
I
DS
DS
GS
GS
F
DS
75 A di/dt
= 0 V, V
= 30 V, R
= 75 A, V
= V
= 0 V, I
= 60 V, V
= 4.5 V, I
= 10 V, I
= 15 V, I
b
30 V R
GEN
DS
5 V, V
D
D
GS
GS
GS
GS
= 30 A, T
= 30 A, T
= 25 V, f = 1 MHz
, I
,
= 10 V, R
= 0 V, T
= 0 V, T
D
GS
= 10 V, I
D
10 V R
GS
GS
L
L
D
= 250 A
D
10 V I
GS
D
= 250 A
= 0.47
=
= 30 A
= 30 A
100 A/ s
= 20 A
= 10 V
= 0 V
0 47
= 0 V
f
J
J
J
J
20 V
= 125 C
= 175 C
D
G
= 125 C
= 175 C
= 75 A
= 2.5
75 A
2 5
Min
120
75
30
1
0.0076
Typ
5600
0.32
820
275
121
107
1.0
20
25
10
22
80
11
4
S-60951—Rev. A, 26-Apr-99
Document Number: 70870
Max
0.009
0.016
0.021
0.011
0.54
250
150
200
240
120
1.3
50
20
20
40
75
100
3
1
9
Unit
nC
nA
pF
ns
ns
ns
V
V
A
S
A
A
V
A
C
C
A
A
F