SI4888DY-E3 Vishay/Siliconix, SI4888DY-E3 Datasheet - Page 5
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SI4888DY-E3
Manufacturer Part Number
SI4888DY-E3
Description
MOSFET 30V 16A 3.5W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI4888DY-E3.pdf
(8 pages)
Specifications of SI4888DY-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
16 A
Resistance Drain-source Rds (on)
7 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Fall Time
10 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
3.5 W
Rise Time
10 ns
Tradename
TrenchFET
Typical Turn-off Delay Time
44 ns
Document Number: 71192
11-Sep-06
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
e
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
D
DIM
A
A
B
C
D
E
H
S
e
h
L
q
1
B
A
1
A
1.35
0.10
0.35
0.19
4.80
3.80
5.80
0.25
0.50
0.44
Min
0°
MILLIMETERS
0.25 mm (Gage Plane)
1.27 BSC
8
1
7
2
Max
1.75
0.20
0.51
0.25
5.00
4.00
6.20
0.50
0.93
0.64
8°
6
3
L
5
4
E
S
h x 45
0.0075
0.053
0.004
0.014
0.189
0.150
0.228
0.010
0.020
0.018
Min
H
0°
0.050 BSC
INCHES
Package Information
C
0.069
0.008
0.020
0.010
0.196
0.157
0.244
0.020
0.037
0.026
Max
8°
q
Vishay Siliconix
All Leads
0.101 mm
0.004"
www.vishay.com
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