BUK7208-40B /T3 NXP Semiconductors, BUK7208-40B /T3 Datasheet - Page 10
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BUK7208-40B /T3
Manufacturer Part Number
BUK7208-40B /T3
Description
MOSFET HIGH PERF TRENCHMOS
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7208-40B_T3.pdf
(14 pages)
Specifications of BUK7208-40B /T3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
105 A
Resistance Drain-source Rds (on)
0.008 Ohms
Configuration
Single
Maximum Operating Temperature
+ 185 C
Mounting Style
SMD/SMT
Package / Case
SOT-428
Fall Time
51 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
167 W
Rise Time
104 ns
Factory Pack Quantity
2500
Typical Turn-off Delay Time
47 ns
Part # Aliases
BUK7208-40B,118
NXP Semiconductors
7. Package outline
Fig 16. Package outline SOT428 (DPAK)
BUK7208-40B
Product data sheet
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT428
2.38
2.22
L
A
2
b
1
0.93
0.46
A
1
1
e
0.89
0.71
b
IEC
b
e
E
2
1
2
1.1
0.9
b
b
1
5.46
5.00
b
2
3
JEDEC
TO-252
0.56
0.20
All information provided in this document is subject to legal disclaimers.
c
A
w
0
D
L
M
1
REFERENCES
A
6.22
5.98
D
H
1
D
Rev. 03 — 7 June 2010
min
4.0
D
mounting
base
2
L
JEITA
SC-63
1
scale
6.73
6.47
E
5
c
A
1
4.45
min
E
A
1
y
2.285
e
N-channel TrenchMOS standard level FET
4.57
10 mm
e
1
10.4
H
9.6
D
PROJECTION
EUROPEAN
2.95
2.55
BUK7208-40B
L
E
1
min
0.5
L
1
© NXP B.V. 2010. All rights reserved.
0.9
0.5
L
2
ISSUE DATE
06-02-14
06-03-16
0.2
w
D
2
SOT428
max
0.2
y
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