VN2460N3-P013-G Supertex, VN2460N3-P013-G Datasheet - Page 4
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VN2460N3-P013-G
Manufacturer Part Number
VN2460N3-P013-G
Description
MOSFET 600V 20Ohm
Manufacturer
Supertex
Datasheet
1.VN2460N3-P002-G.pdf
(6 pages)
Specifications of VN2460N3-P013-G
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.16 A
Resistance Drain-source Rds (on)
20 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Factory Pack Quantity
2000
Typical Turn-off Delay Time
25 ns
Typical Performance Curves
1.2
1.1
1.0
0.9
0.8
300
225
150
0.5
0.4
0.3
0.2
0.1
75
0
0
-50
0
0
C RSS
V DS = 25V
Capacitance vs. Drain Source Voltage
BV
DSS
2
Transfer Characteristics
10
0
Variation with Temperature
C OSS
T A = 25°C
C ISS
V GS (Volts)
V DS (volts)
4
T j (
T A = -55°C
20
50
°
C)
●
6
1235 Bordeaux Drive, Sunnyvale, CA 94089
f = 1MHz
T A = 125°C
100
30
(cont.)
8
150
10
40
4
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
50
40
30
20
10
8
6
4
2
0
0
-50
0
0
●
V GS(TH) and R DS(ON) w/ Temperature
I D = 0.5A
Tel: 408-222-8888
Gate Drive Dynamic Characteristics
R DS(on) @ 10V, 0.1A
-25
On Resistance vs. Drain Current
V GS(th) @ 2mA
0.2
1.0
0
Q (nanocoulombs)
G
I D (Amperes)
VGS = 4.5V
25
0.4
2.0
T j (
50
V DS =10V
°
C)
●
0.6
3.0
www.supertex.com
75
V DS =40V
VGS = 10V
100
0.8
4.0
125
150
1.0
5.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VN2460