SI4864DY-E3 Vishay/Siliconix, SI4864DY-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4864DY-E3
• Description: MOSFET 20V 25A 3.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI4864DY-E3

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 17 A
• Resistance Drain-source Rds (on): 3.5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 44 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.6 W
• Rise Time: 44 ns
• Factory Pack Quantity: 100
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 150 ns

Si4864DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71449.
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.4
0.2
0.0
0.01
0.01
0.1
0.1
- 50
2
1
2
1
10
10
- 4
- 4
0.02
0.05
- 25
Duty Cycle = 0.5
0.2
0.05
0.02
0.1
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0
Threshold Voltage
T
J
10
25
- Temperature (°C)
- 3
50
10
- 3
Normalized Thermal Transient Impedance, Junction-to-Ambient
I
D
Single Pulse
75
Normalized Thermal Transient Impedance, Junction-to-Foot
= 250 µA
10
100
- 2
125
Square Wave Pulse Duration (s)
150
10
Square Wave Pulse Duration (s)
- 2
10
- 1
10
60
50
40
30
20
10
1
0
10
- 1
- 2
10
- 1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
DM
JM
- T
1
t
1
A
1
Time (s)
= P
S09-0221-Rev. C, 09-Feb-09
t
2
DM
Document Number: 71449
Z
thJA
thJA
100
10
t
t
1
2
(t)
= 67 °C/W
100
1 0
600
600