BUK127-50GT T/R NXP Semiconductors, BUK127-50GT T/R Datasheet - Page 5

• Manufacturer Part Number: BUK127-50GT T/R
• Description: MOSFET TAPE-7 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK127-50GT T/R

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 50 V
• Continuous Drain Current: 2.1 A
• Configuration: Single Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 700 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1800 mW
• Rise Time: 700 ns
• Factory Pack Quantity: 1000
• Typical Turn-off Delay Time: 3200 ns
• Part # Aliases: BUK127-50GT,115

Philips Semiconductors
MECHANICAL DATA
1 For further information, refer to surface mounting instructions for SOT223 envelope. Epoxy meets UL94 V0 at 1/8". Net Mass: 0.11 g
December 2001
PowerMOS transistor
Logic level TOPFET
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT223
1.8
1.5
A
0.10
0.01
A
1
1
y
0.80
0.60
b
p
IEC
e
3.1
2.9
1
b
1
Fig.2. SOT223 surface mounting package
b
0.32
0.22
D
e
1
c
2
b
6.7
6.3
D
p
JEDEC
4
3.7
3.3
E
REFERENCES
3
0
4.6
e
w
B
M
2.3
e
SC-73
B
scale
1
EIAJ
5
2
c
H
7.3
6.7
E
4 mm
A
L
1.1
0.7
1
p
0.95
0.85
Q
0.2
v
H
E
E
detail X
0.1
w
1
.
PROJECTION
EUROPEAN
0.1
y
A
L
p
Q
X
ISSUE DATE
97-02-28
99-09-13
v
BUK127-50GT
A
Product specification
M
A
SOT223
Rev 2.000