SI4943DY-E3 Vishay/Siliconix, SI4943DY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4943DY-E3
• Description: MOSFET 20V 8.4A 2W
• Manufacturer: Vishay/Siliconix

Specifications of SI4943DY-E3

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.3 A
• Resistance Drain-source Rds (on): 19 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 24 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 24 ns
• Factory Pack Quantity: 100
• Typical Turn-off Delay Time: 56 ns

Document Number: 71682
S-21192—Rev. B, 29-Jul-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.05
0.04
0.03
0.02
0.01
0.00
10
30
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
0.2
= 8.4 A
On-Resistance vs. Drain Current
= 10 V
6
8
V
SD
Q
0.4
g
T
- Source-to-Drain Voltage (V)
I
J
D
- Total Gate Charge (nC)
= 150_C
- Drain Current (A)
Gate Charge
12
16
0.6
0.8
V
V
18
24
GS
GS
T
= 4.5 V
J
= 10 V
= 25_C
1.0
24
32
1.2
1.4
30
40
New Product
3000
2500
2000
1500
1000
0.06
0.05
0.04
0.03
0.02
0.01
0.00
500
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
C
D
- 25
GS
rss
= 8.4 A
= 10 V
2
4
T
V
V
0
J
GS
DS
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
4
8
Vishay Siliconix
50
C
C
I
D
oss
iss
= 8.4 A
12
6
75
Si4943DY
100
16
www.vishay.com
8
125
150
10
20
3