BUK9237-55A /T3 NXP Semiconductors, BUK9237-55A /T3 Datasheet - Page 8

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BUK9237-55A /T3

Manufacturer Part Number
BUK9237-55A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK9237-55A /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
32 A
Resistance Drain-source Rds (on)
0.033 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-428
Fall Time
73 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
77 W
Rise Time
36 ns
Factory Pack Quantity
2500
Typical Turn-off Delay Time
95 ns
Part # Aliases
BUK9237-55A,118
NXP Semiconductors
BUK9237-55A
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
5
4
3
2
1
0
gate charge; typical values
0
V
5
DD
= 14 V
10
(A)
I
S
100
80
60
40
20
V
0
15
DD
0
All information provided in this document is subject to legal disclaimers.
Q
= 44 V
G
(nC)
03na93
Rev. 3 — 9 November 2010
20
0.4
T
j
= 175 °C
0.8
Fig 14. Input, output and reverse transfer capacitances
(pF)
2500
C
2000
1500
1000
500
T
j
1.2
0
= 25 °C
10
as a function of drain-source voltage; typical
values
−2
V
SD
03na92
(V)
N-channel TrenchMOS logic level FET
C
C
C
1.6
iss
oss
rss
10
−1
BUK9237-55A
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03na98
(V)
10
2
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