SI4836DY-E3 Vishay/Siliconix, SI4836DY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4836DY-E3
• Description: MOSFET 12V 13A 1W
• Manufacturer: Vishay/Siliconix

Specifications of SI4836DY-E3

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 17 A
• Resistance Drain-source Rds (on): 3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 115 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.6 W
• Rise Time: 41 ns
• Factory Pack Quantity: 100
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 190 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71692
S09-0221-Rev. E, 09-Feb-09
0.006
0.005
0.004
0.003
0.002
0.001
0.000
60
10
1
6
5
4
3
2
1
0
0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
0.2
10
= 25 A
On-Resistance vs. Drain Current
T
14
J
= 6 V
= 150 °C
V
SD
Q
g
- Source-to-Drain Voltage (V)
0.4
I
20
- Total Gate Charge (nC)
D
- Drain Current (A)
Gate Charge
28
0.6
30
T
J
= 25 °C
42
0.8
V
40
V
GS
V
GS
GS
= 1.8 V
= 2.5 V
= 4.5 V
56
1.0
50
1.2
70
60
0.015
0.012
0.009
0.006
0.003
0.000
8000
6400
4800
3200
1600
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
- 25
V
I
D
GS
= 25 A
2
= 4.5 V
2
V
C
V
C
GS
DS
C
oss
0
T
rss
iss
J
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
4
25
Capacitance
4
50
Vishay Siliconix
6
6
75
I
D
Si4836DY
= 25 A
8
www.vishay.com
100
8
10
125
150
10
12
3