TN0106N3-P014-G Supertex, TN0106N3-P014-G Datasheet - Page 4

• Manufacturer Part Number: TN0106N3-P014-G
• Description: MOSFET 60V 3Ohm
• Manufacturer: Supertex

Specifications of TN0106N3-P014-G

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Resistance Drain-source Rds (on): 3 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1 W
• Factory Pack Quantity: 2000
• Typical Turn-off Delay Time: 6 ns

Typical Performance Curves
100
3.0
2.4
1.8
1.2
0.6
1.3
1.2
1.1
1.0
0.9
0.8
75
50
25
0
0
Supertex inc.
-50
0
Capacitance vs. Drain-to-Source Voltage
0
V
BV
DS
= 25V
DSS
2.0
Transfer Characteristics
10
Variation with Temperature
0
f = 1.0MHz
4.0
V
V
GS
DS
T
j
(volts)
(
20
50
(volts)
O
C)
6.0
T
1235 Bordeaux Drive, Sunnyvale, CA 94089
A
= -55
100
30
8.0
150
25
O
C
C
C
C
(cont.)
OSS
RSS
O
ISS
O
C
C
150
10
40
4
1.4
1.2
1.0
0.8
0.6
0.4
5.0
4.0
3.0
2.0
1.0
8.0
6.0
4.0
2.0
10
0
0
-50
0
0
V
(th)
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
and R
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1.0
1.0
V
0
DS
(th)
50pF
V
Q
@ 0.5mA
GS
Variation with Temperature
G
= 5.0V
(nanocoulombs)
I
2.0
2.0
D
(amperes)
T
R
j
(
50
V
DS(ON)
O
DS
C)
= 10V
3.0
3.0
@ 10V, 0.5A
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V
100
GS
V
= 10V
4.0
DS
4.0
= 40V
150
5.0
5.0
1.4
1.2
1.0
0.8
0.6
0.4
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