VS-VSKT152/04PBF Vishay Semiconductors, VS-VSKT152/04PBF Datasheet - Page 6

• Manufacturer Part Number: VS-VSKT152/04PBF
• Description: SCR Modules 400 Volt 150 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-VSKT152/04PBF

• Product Category: SCR Modules
• Rohs: yes
• On-state Rms Current (it Rms): 330 A
• Non Repetitive On-state Current: 4000 A
• Breakover Current Ibo Max: 4200 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• On-state Voltage: 1.48 V
• Holding Current (ih Max): 200 mA
• Gate Trigger Voltage (vgt): 2.5 V
• Gate Trigger Current (igt): 150 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: INT-A-PAK
• Circuit Type: Thyristors / Thyristors
• Current Rating: 150 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 15

VSKT152/04PbF
Vishay High Power Products
www.vishay.com
6
Fig. 10 - On-State Voltage Drop Characteristics
1000
100
10
1
0.5
Instantaneous On-state Voltage (V)
1
Tj = 25˚C
Tj = 125˚C
100
0.1
10
0.001
1
1.5
Rectangular gate pulse
a)Recommended load line for
b)Recommended load line for
VSKT152
Per Junction
rated di/dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
VGD
For technical questions, contact:
2
IGD
0.01
(New INT-A-PAK Power Module)
2.5
VSKT152
Thyristor/Thyristor, 150 A
Instantaneous Gate Current (A)
Fig. 12 - Gate Characteristics
0.1
(b)
(a)
1
[e-mail]
Frequency Limited by PG(AV)
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
10
Fig. 11 - Thermal Impedance Z
0.001
(4)
0.01
0.1
0.001
1
(3) (2)
Steady State Value
RthJC = 0.182 K/W
(DC Operation)
100
Square Wave Pulse Duration (s)
(1)
0.01
1000
VSKT152
0.1
thJC
Document Number: 94514
Characteristics
Revision: 04-May-10
1