VS-VSKT152/04PBF Vishay Semiconductors, VS-VSKT152/04PBF Datasheet - Page 2

• Manufacturer Part Number: VS-VSKT152/04PBF
• Description: SCR Modules 400 Volt 150 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-VSKT152/04PBF

• Product Category: SCR Modules
• Rohs: yes
• On-state Rms Current (it Rms): 330 A
• Non Repetitive On-state Current: 4000 A
• Breakover Current Ibo Max: 4200 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• On-state Voltage: 1.48 V
• Holding Current (ih Max): 200 mA
• Gate Trigger Voltage (vgt): 2.5 V
• Gate Trigger Current (igt): 150 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: INT-A-PAK
• Circuit Type: Thyristors / Thyristors
• Current Rating: 150 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 15

VSKT152/04PbF
Vishay High Power Products
www.vishay.com
2
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
on-state, non-repetitive
surge current
Maximum I
Maximum I
Value of threshold voltage
On-state slope resistance
Maximum on-state voltage drop
Maximum holding current
Maximum latching current
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical turn-off time
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
Critical rate of rise of off-state voltage
2
2
t for fusing
√t for fusing
SYMBOL
SYMBOL
SYMBOL
For technical questions, contact:
I
V
dV/dt
T(RMS)
I
I
I
I
V
V
T(AV)
I
RRM,
TSM
DRM
T(TO)
t
I
2
I
t
I
t
r
INS
2
TM
gd
H
gr
√t
L
q
t
t
(New INT-A-PAK Power Module)
180° conduction half sine wave
As AC switch
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
T
I
T
resistive load, gate open circuit
T
T
I
V
T
T
50 Hz, circuit to base, all terminals shorted, t = 1 s
pk
TM
J
J
J
J
R
J
J
Thyristor/Thyristor, 150 A
maximum
= 25 °C, anode supply = 6 V,
= 25 °C, anode supply = 6 V, resistive load
= 25 °C
= 125 °C
= T
= π x I
= 50 V; dV/dt = 20 V/μs; gate 0 V, 100 Ω
= 300 A, - dl/dt = 15 A/μs; T
J
maximum, exponential to 67 % rated V
T(AV)
, T
TEST CONDITIONS
Gate current = 1 A, dl
V
TEST CONDITIONS
TEST CONDITIONS
J
d
= 25 °C
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
= 0.67 % V
[e-mail]
RRM
RRM
DRM
J
= T
Sine half wave,
initial T
T
J
g
J
/dt = 1 A/μs
maximum
maximum
J
=
DRM
50 to 200
VALUES
VALUES
VALUES
4000
4200
3350
3500
3500
1000
0.82
1.44
1.48
150
330
800
200
400
85
80
73
56
51
50
1
2
Document Number: 94514
Revision: 04-May-10
UNITS
UNITS
UNITS
kA
kA
V/μs
mΩ
mA
mA
°C
μs
A
A
V
V
V
2√
2
s
s