AT28HC64B-12JU Atmel, AT28HC64B-12JU Datasheet - Page 11

IC EEPROM 64KBIT 120NS 32PLCC

AT28HC64B-12JU

Manufacturer Part Number
AT28HC64B-12JU
Description
IC EEPROM 64KBIT 120NS 32PLCC
Manufacturer
Atmel
Datasheets

Specifications of AT28HC64B-12JU

Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
64K (8K x 8)
Speed
120ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-PLCC
Capacitance, Input
4 pF
Capacitance, Output
8 pF
Current, Input, Leakage
10 μA
Current, Operating
40 mA
Current, Output, Leakage
10
Data Retention
10 yrs.
Density
64K
Organization
8K×8
Package Type
PLCC
Temperature, Operating
-40 to +85 °C
Time, Access
120 ns
Time, Address Hold
50
Voltage, Input, High
2 V
Voltage, Input, Low
0.8 V
Voltage, Output, High
2.4 V
Voltage, Output, Low
0.4 V
Voltage, Supply
5 V
Interface Type
Parallel
Access Time (max)
120ns
Write Protection
Yes
Operating Supply Voltage (typ)
5V
Operating Temp Range
-40C to 85C
Supply Current
40mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
32
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT28HC64B-12JU
Manufacturer:
Atmel
Quantity:
10 000
Part Number:
AT28HC64B-12JU
Manufacturer:
ATMEL
Quantity:
1 545
22. Data Polling Characteristics
Note:
23. Data Polling Waveforms
24. Toggle Bit Characteristics
Notes:
25. Toggle Bit Waveforms
Notes:
0274L–PEEPR–2/3/09
Symbol
t
t
t
t
Symbol
t
t
t
t
t
DH
OEH
OE
WR
DH
OEH
OE
OEHP
WR
1. These parameters are characterized and not 100% tested.
1. These parameters are characterized and not 100% tested.
2.
1. Toggling either OE or CE or both OE and CE will operate toggle bit.
2. Beginning and ending state of I/O6 will vary.
3. Any address location may be used, but the address should not vary.
See “AC Read Characteristics” on page 6.
Parameter
Data Hold Time
OE Hold Time
OE to Output Delay
Write Recovery Time
Parameter
Data Hold Time
OE Hold Time
OE to Output Delay
OE High Pulse
Write Recovery Time
(2)
t
DH
(1)
(2)
t
OEH
t
DH
(1)(2)(3)
t
OEH
t
(1)
OE
t
OE
(1)
See “AC Read Characteristics” on page 6.
Min
Min
150
10
10
0
0
0
0
Typ
t
Typ
WR
t
WR
Max
Max
Units
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
11

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