AT28HC64B-12JU Atmel, AT28HC64B-12JU Datasheet

IC EEPROM 64KBIT 120NS 32PLCC

AT28HC64B-12JU

Manufacturer Part Number
AT28HC64B-12JU
Description
IC EEPROM 64KBIT 120NS 32PLCC
Manufacturer
Atmel
Datasheets

Specifications of AT28HC64B-12JU

Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
64K (8K x 8)
Speed
120ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-PLCC
Capacitance, Input
4 pF
Capacitance, Output
8 pF
Current, Input, Leakage
10 μA
Current, Operating
40 mA
Current, Output, Leakage
10
Data Retention
10 yrs.
Density
64K
Organization
8K×8
Package Type
PLCC
Temperature, Operating
-40 to +85 °C
Time, Access
120 ns
Time, Address Hold
50
Voltage, Input, High
2 V
Voltage, Input, Low
0.8 V
Voltage, Output, High
2.4 V
Voltage, Output, Low
0.4 V
Voltage, Supply
5 V
Interface Type
Parallel
Access Time (max)
120ns
Write Protection
Yes
Operating Supply Voltage (typ)
5V
Operating Temp Range
-40C to 85C
Supply Current
40mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
32
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT28HC64B-12JU
Manufacturer:
Atmel
Quantity:
10 000
Part Number:
AT28HC64B-12JU
Manufacturer:
ATMEL
Quantity:
1 545
Features
1. Description
The AT28HC64B is a high-performance electrically-erasable and programmable read-
only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 55 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 100 µA.
The AT28HC64B is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to
64 bytes of data are internally latched, freeing the address and data bus for other
operations. Following the initiation of a write cycle, the device will automatically write
the latched data using an internal control timer. The end of a write cycle can be
detected by DATA polling of I/O7. Once the end of a write cycle has been detected, a
new access for a read or write can begin.
Atmel’s AT28HC64B has additional features to ensure high quality and manufactura-
bility. The device utilizes internal error correction for extended endurance and
improved data retention characteristics. An optional software data protection mecha-
nism is available to guard against inadvertent writes. The device also includes an
extra 64 bytes of EEPROM for device identification or tracking.
Fast Read Access Time – 70 ns
Automatic Page Write Operation
Fast Write Cycle Times
Low Power Dissipation
Hardware and Software Data Protection
DATA Polling and Toggle Bit for End of Write Detection
High Reliability CMOS Technology
Single 5 V ±10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option
– Internal Address and Data Latches for 64 Bytes
– Page Write Cycle Time: 10 ms Maximum (Standard)
– 1 to 64-byte Page Write Operation
– 40 mA Active Current
– 100 µA CMOS Standby Current
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
2 ms Maximum (Option – Ref. AT28HC64BF Datasheet)
64K (8K x 8)
High Speed
Parallel
EEPROM with
Page Write and
Software Data
Protection
AT28HC64B

Related parts for AT28HC64B-12JU

AT28HC64B-12JU Summary of contents

Page 1

... When the device is deselected, the CMOS standby current is less than 100 µA. The AT28HC64B is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 64-byte page register to allow writing bytes simultaneously ...

Page 2

... Exposure to absolute maximum rating conditions for extended periods may affect device reliability + 0 Condition MHz OUT -400 µA OH AT28HC64B AT28HC64B-120 -40°C - 85° ±10 OUT High High Z V High Z IL Min Max Units 10 µA 10 µA (1) 100 µA (1) ...

Page 3

... AT28HC64B-70 AT28HC64B-90 Min Max Min (1)(2)(3)(4) ADDRESS VALID ACC HIGH after the address transition without impact on t ACC after the falling edge of CE without impact pF). L AT28HC64B-120 Max Min Max 90 120 90 120 OUTPUT VALID . ACC after an address change CE ACC OE Units ...

Page 4

... Input Test Waveforms and Measurement Level 12. Output Test Load 13. Pin Capacitance ( MHz 25°C Symbol Typ OUT Note: 1. This parameter is characterized and is not 100% tested < Max Units AT28HC64B Conditions OUT 7 ...

Page 5

... Chip Select Setup Time CS t Chip Select Hold Time CH t Write Pulse Width ( Data Setup Time Data, OE Hold Time DH OEH 15. AC Write Waveforms 15.1 WE Controlled OE ADDRESS CE WE DATA IN 15.2 CE Controlled OE ADDRESS WE CE DATA IN AT28HC64B 8 t OES OES Min Max 100 ...

Page 6

... Page Mode Characteristics Symbol Parameter t Write Cycle Time WC t Write Cycle Time (Use AT28HC64BF Address Setup Time AS t Address Hold Time AH t Data Setup Time DS t Data Hold Time DH t Write Pulse Width WP t Byte Load Cycle Time BLC t Write Pulse Width High WPH 17 ...

Page 7

... Toggling either both OE and CE will operate toggle bit. 2. Beginning and ending state of I/O6 will vary. 3. Any address location may be used, but the address should not vary. (1) See “AC Read Characteristics” on page 6. t OEH t OE (1) (1)(2)(3) t OEH AT28HC64B Min Typ Max Min Typ Max 10 10 150 0 t ...

Page 8

... AT28HC64B-90TI AT28HC64B-12JI AT28HC64B-12PI AT28HC64B-12SI AT28HC64B-12TI Ordering Code AT28HC64B-70TU AT28HC64B-70JU AT28HC64B-70SU AT28HC64B-90JU AT28HC64B-90PU AT28HC64B-90SU AT28HC64B-90TU AT28HC64B-12JU AT28HC64B-12SU Package Type Package and Temperature Combinations JI, PI, SI, TI, TU, JU, SU JI, JU, PI, PU, SI, SU, TI, TU JI, JU, PI, PU, SI, SU, TI, TU AT28HC64B Package Operation Range 32J 28P6 28S 28T ...

Page 9

... Allowable protrusion is .010"(0.254 mm) per side. Dimension D1 and E1 include mold mismatch and are measured at the extreme material condition at the upper or lower parting line. 3. Lead coplanarity is 0.004" (0.102 mm) maximum. 2325 Orchard Parkway San Jose, CA 95131 R AT28HC64B 14 1.14(0.045) X 45˚ PIN NO. 1 IDENTIFIER E1 E ...

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