VS-ST230C04C1 Vishay Semiconductors, VS-ST230C04C1 Datasheet - Page 3
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VS-ST230C04C1
Manufacturer Part Number
VS-ST230C04C1
Description
SCR Modules 410 Amp 400 Volt 780 Amp IT(RMS)
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-ST230C08C0.pdf
(8 pages)
Specifications of VS-ST230C04C1
Product Category
SCR Modules
On-state Rms Current (it Rms)
780 A
Non Repetitive On-state Current
5700 A
Breakover Current Ibo Max
5970 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
30 mA
On-state Voltage
1.69 V
Holding Current (ih Max)
600 mA
Gate Trigger Voltage (vgt)
3 V
Gate Trigger Current (igt)
150 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
Chassis
Package / Case
TO-200AB (A-PUK)
Circuit Type
SCR
Current Rating
410 A
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
12
Note
• The table above shows the increment of thermal resistance R
Document Number: 94398
Revision: 11-Aug-08
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Maximum thermal resistance,
case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
ΔR
CONDUCTION ANGLE
thJC
CONDUCTION
180°
120°
90°
60°
30°
SINGLE SIDE
SINUSOIDAL CONDUCTION
0.015
0.018
0.024
0.035
0.060
For technical questions, contact: ind-modules@vishay.com
(Hockey PUK Version), 410 A
SYMBOL
SYMBOL
R
P
+ V
R
- V
P
V
V
T
thC-hs
G(AV)
I
I
thJ-hs
Phase Control Thyristors
I
GM
T
GD
GT
GM
Stg
GT
GD
GM
J
GM
DOUBLE SIDE
0.017
0.019
0.024
0.035
0.060
T
T
T
T
T
T
T
T
T
T
T
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
See dimensions - link at the end of datasheet
J
J
J
J
J
J
J
J
J
J
J
thJC
= T
= T
= T
= T
= T
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
J
J
J
J
J
when devices operate at different conduction angles than DC
maximum
maximum, t
maximum, f = 50 Hz, d% = 50
maximum, t
maximum, t
RECTANGULAR CONDUCTION
SINGLE SIDE
TEST CONDITIONS
TEST CONDITIONS
0.011
0.019
0.026
0.036
0.060
p
p
p
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
cathode applied
≤ 5 ms
≤ 5 ms
≤ 5 ms
DOUBLE SIDE
Vishay High Power Products
0.011
0.019
0.026
0.036
0.061
DRM
anode to
ST230CPbF Series
TEST CONDITIONS
T
J
= T
TYP.
180
2.9
1.8
1.2
J
90
40
- 40 to 125
- 40 to 150
TO-200AB (A-PUK)
VALUES
maximum
VALUES
0.033
0.017
(500)
4900
10.0
0.25
0.17
0.08
2.0
3.0
5.0
20
10
50
MAX.
150
www.vishay.com
3.0
-
-
-
-
UNITS
UNITS
UNITS
K/W
K/W
(kg)
mA
mA
°C
W
A
V
V
V
N
g
3