VS-ST1230C16K0LP Vishay Semiconductors, VS-ST1230C16K0LP Datasheet - Page 3

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VS-ST1230C16K0LP

Manufacturer Part Number
VS-ST1230C16K0LP
Description
SCR Modules 1745 Amp 1600 Volt 3200 Amp IT(RMS)
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-ST1230C16K0LP

Product Category
SCR Modules
Rohs
yes
On-state Rms Current (it Rms)
3200 A
Non Repetitive On-state Current
33500 A
Breakover Current Ibo Max
35100 A
Rated Repetitive Off-state Voltage Vdrm
1.6 kV
Off-state Leakage Current @ Vdrm Idrm
100 mA
On-state Voltage
1.62 V
Holding Current (ih Max)
600 mA
Gate Trigger Voltage (vgt)
3 V
Gate Trigger Current (igt)
200 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
Chassis
Package / Case
A-24 (K-PUK)
Circuit Type
SCR
Current Rating
1745 A
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
2
Note
• The table above shows the increment of thermal resistance R
Revision: 10-Apr-13
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction 
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Maximum thermal resistance,
case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
R
CONDUCTION ANGLE
thJC
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
CONDUCTION
180°
120°
90°
60°
30°
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SINGLE SIDE
0.003
0.004
0.005
0.007
0.012
CONDUCTION
SINUSOIDAL
SYMBOL
SYMBOL
R
R
+ V
P
- V
P
V
T
V
thJ-hs
thC-hs
I
I
G(AV)
I
GM
T
GT
GD
GM
Stg
GT
GD
GM
J
GM
DOUBLE SIDE
0.003
0.004
0.005
0.007
0.012
T
T
T
T
T
T
T
T
T
T
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
See dimensions - link at the end of datasheet
J
J
J
J
J
J
J
J
J
J
= T
= T
= T
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
= T
thJC
J
J
J
J
maximum, t
maximum, f = 50 Hz, d% = 50
maximum, t
maximum
when devices operate at different conduction angles than DC
3
SINGLE SIDE
TEST CONDITIONS
TEST CONDITIONS
0.002
0.004
0.005
0.007
0.012
p
p
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/ 
voltage not to trigger is the
maximum value which will not
trigger any unit with rated V
anode to cathode applied
RECTANGULAR
 5 ms
 5 ms
CONDUCTION
www.vishay.com/doc?91000
DOUBLE SIDE
0.002
0.004
0.005
0.007
0.012
ST1230C..KP Series
Vishay Semiconductors
DRM
DiodesEurope@vishay.com
TEST CONDITIONS
T
J
= T
Document Number: 94395
typ.
200
100
1.4
1.1
0.9
50
J
- 40 to 125
- 40 to 150
VALUES
VALUES
maximum
24 500
(2500)
0.042
0.021
0.006
0.003
0.25
425
A-24 (K-PUK)
3.0
5.0
16
20
10
3
Max.
200
3.0
-
-
-
-
UNITS
UNITS
UNITS
K/W
K/W
mA
mA
(kg)
°C
W
N
A
V
V
V
g

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