VS-ST1230C16K0LP Vishay Semiconductors, VS-ST1230C16K0LP Datasheet - Page 2

• Manufacturer Part Number: VS-ST1230C16K0LP
• Description: SCR Modules 1745 Amp 1600 Volt 3200 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST1230C16K0LP

• Product Category: SCR Modules
• Rohs: yes
• On-state Rms Current (it Rms): 3200 A
• Non Repetitive On-state Current: 33500 A
• Breakover Current Ibo Max: 35100 A
• Rated Repetitive Off-state Voltage Vdrm: 1.6 kV
• Off-state Leakage Current @ Vdrm Idrm: 100 mA
• On-state Voltage: 1.62 V
• Holding Current (ih Max): 600 mA
• Gate Trigger Voltage (vgt): 3 V
• Gate Trigger Current (igt): 200 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: A-24 (K-PUK)
• Circuit Type: SCR
• Current Rating: 1745 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 2

Revision: 10-Apr-13
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of 
off-state voltage
Maximum peak reverse and 
off-state leakage current
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
2
2
t for fusing
t for fusing
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SYMBOL
SYMBOL
SYMBOL
V
V
I
dV/dt
dI/dt
I
T(RMS)
I
I
I
RRM
V
T(AV)
I
T(TO)1
T(TO)2
DRM
TSM
2
I
r
r
t
t
I
I
2
TM
t1
t2
H
d
q
t
L
t
,
Gate drive 20 V, 20 , t
T
Gate current 1 A, dI
V
I
V
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x  x I
(I >  x I
(16.7 % x  x I
(I >  x I
I
T
T
T
TM
pk
J
d
R
J
J
J
= T
= 0.67 % V
= T
= T
= 25 °C, anode supply 12 V resistive load
= 50 V, dV/dt = 20 V/μs, gate 0 V 100 , t
= 4000 A, T
= 550 A, T
J
J
J
2
maximum linear to 80 % rated V
maximum, anode voltage  80 % V
maximum, rated V
T(AV)
T(AV)
), T
), T
DRM
J
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
T(AV)
J
J
J
= T
= T
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
= T
= T
, T
J
< I <  x I
< I <  x I
J
g
J
J
maximum, dI/dt = 40 A/μs, 
J
/dt = 1 A/μs
maximum, t
maximum
maximum
= 25 °C
RRM
RRM
r
www.vishay.com/doc?91000
 1 μs
DRM
T(AV)
T(AV)
Sinusoidal half wave,
initial T
/V
RRM
), T
), T
p
= 10 ms sine pulse
J
J
ST1230C..KP Series
applied
Vishay Semiconductors
J
= T
= T
= T
DRM
J
J
J
maximum
maximum
DRM
maximum
[e-mail]
p
= 500 μs
Document Number: 94395
1745 (700)
VALUES
VALUES
VALUES
55 (85)
33 500
35 100
28 200
29 500
56 150
3200
5615
5126
3971
3625
1000
1000
0.93
1.02
0.17
0.16
1.62
600
200
500
100
1.9
UNITS
UNITS
kA
kA
UNIT
A/μs
m
V/μs
mA
°C
mA
μs
A
A
V
V
2
S
2
s
s