VN0104N3-P013-G Supertex, VN0104N3-P013-G Datasheet - Page 2
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VN0104N3-P013-G
Manufacturer Part Number
VN0104N3-P013-G
Description
MOSFET 40V 3Ohm
Manufacturer
Supertex
Datasheet
1.VN0104N3-P014-G.pdf
(5 pages)
Specifications of VN0104N3-P013-G
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
350 mA
Resistance Drain-source Rds (on)
3 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Factory Pack Quantity
2000
Typical Turn-off Delay Time
6 ns
Thermal Characteristics
Notes:
Electrical Characteristics
Switching Waveforms and Test Circuit
Notes:
ΔR
†
ΔV
R
BV
V
1.
2.
Sym
t
I
C
C
t
C
d(OFF)
I
I
G
V
D(ON)
DS(ON)
d(ON)
GS(th)
GSS
DSS
DS(ON)
t
OSS
RSS
t
I
GS(th)
t
ISS
SD
rr
D
DSS
FS
r
f
(continuous) is limited by max rated T
All D.C. parameters 100% tested at 25
All A.C. parameters sample tested.
Package
OUTPUT
TO-92
INPUT
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
Gate body leakage
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Change in R
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Parameter
Supertex inc.
VDD
10V
0V
0V
10%
GS(th)
DS(ON)
with temperature
t
with temperature
d(ON)
(continuous)
10%
t
(ON)
90%
(mA)
350
I
t
D
j
r
1235 Bordeaux Drive, Sunnyvale, CA 94089
.
O
(T
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
A
= 25
†
O
C unless otherwise specified)
90%
t
(pulsed)
d(OFF)
t
2.0
(OFF)
(A)
I
D
t
90%
f
10%
Power Dissipation
2
Min
300
0.8
0.5
2.0
40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
@T
C
(W)
1.0
= 25
0.70
Typ
-3.8
450
400
2.5
2.5
5.0
3.0
5.0
6.0
5.0
1.2
1.0
3.0
55
20
-
-
-
-
-
O
C
Generator
Pulse
Tel: 408-222-8888
Max
-5.5
100
100
2.4
1.0
5.0
3.0
1.0
8.0
5.0
8.0
9.0
8.0
1.8
65
25
-
-
-
-
-
INPUT
R
GEN
mV/
mmho V
Units
(
%/
O
125
θ
C/W)
µA
nA
pF
ns
ns
Ω
V
V
A
V
jc
O
O
C
C V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
I
R
V
V
Conditions
D
GS
GS
GS
GS
GS
DS
GS
GS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
GEN
www.supertex.com
(
= 1.0A,
O
170
θ
C/W)
= 0V, I
= V
= V
= ± 20V, V
= 0V, V
= 0.8 Max Rating,
= 0V, T
= 5.0V, V
= 10V, V
= 5.0V, I
= 10V, I
= 10V, I
= 25V, I
= 0V,
= 25V,
= 25V,
= 0V, I
= 0V, I
ja
= 25Ω
DS
DS
V
R
, I
, I
DD
L
D
SD
SD
A
D
D
DS
D
D
D
D.U.T.
= 1.0mA
= 1.0mA
= 1.0mA
D
= 125°C
DS
= 1.0A
= 1.0A
(mA)
350
DS
= 500mA
I
= 1.0A
= 1.0A
OUTPUT
= Max Rating
= 250mA
DR
DS
= 25V
= 25V
†
= 0V
VN0104
I
2.0
DRM
(A)