VN0104N3 SUTEX [Supertex, Inc], VN0104N3 Datasheet
VN0104N3
Manufacturer Part Number
VN0104N3
Description
N-Channel Enhancement-Mode Vertical DMOS FET
Manufacturer
SUTEX [Supertex, Inc]
Datasheet
1.VN0104N3.pdf
(4 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Part Number:
VN0104N3
Manufacturer:
ST/MOTO
Quantity:
20 000
Company:
Part Number:
VN0104N3-G
Manufacturer:
Supertex
Quantity:
7 000
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low C
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps,
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Ordering Information
Distance of 1.6 mm from case for 10 seconds.
BV
BV
memories, displays, bipolar transistors, etc.)
40V
60V
DSS
DGS
/
ISS
and fast switching speeds
R
(max)
3.0Ω
3.0Ω
DS(ON)
(min)
I
2.0A
2.0A
D(ON)
N-Channel Enhancement-Mode
Vertical DMOS FET
-55°C to +150°C
Order Number / Package
BV
300°C
BV
± 20V
VN0104N3
VN0106N3
DGS
DSS
TO-92
1
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Option
See Package Outline section for dimensions.
TO-92
S G D
VN0104
VN0106
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VN0104N3 Summary of contents
Page 1
... Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. N-Channel Enhancement-Mode Vertical DMOS FET Order Number / Package TO-92 VN0104N3 VN0106N3 Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process ...
Page 2
Thermal Characteristics Package I (continuous)* D TO-92 350mA * I (continuous) is limited by max rated Electrical Characteristics Symbol Parameter BV Drain-to-Source DSS Breakdown Voltage V Gate Threshold Voltage GS(th) Change in V with Temperature ∆V ...
Page 3
Typical Performance Curves ° ° ° ° 3 VN0104/VN0106 ° ° ...
Page 4
Typical Performance Curves BV Variation with Temperature DSS 1.1 1.0 0.9 - (°C) j Transfer Characteristics 2 25V -55°C 2.0 A 1.5 1.0 0 (volts) GS ...