SI4862DY-E3 Vishay/Siliconix, SI4862DY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4862DY-E3
• Description: MOSFET 16V 25A 3.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI4862DY-E3

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 16 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 17 A
• Resistance Drain-source Rds (on): 3.3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 38 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.6 W
• Rise Time: 38 ns
• Factory Pack Quantity: 100
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 120 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71439
S09-0221-Rev. C, 09-Feb-09
0.010
0.008
0.006
0.004
0.002
0.000
60
10
5
4
3
2
1
0
1
0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
10
On-Resistance vs. Drain Current
= 25 A
0.2
12
= 6 V
V
SD
Q
T
g
J
- Source-to-Drain Voltage (V)
20
- Total Gate Charge (nC)
0.4
I
= 150 °C
D
- Drain Current (A)
Gate Charge
24
30
0.6
36
40
0.8
T
J
= 25 °C
V
V
GS
GS
48
= 2.5 V
50
1.0
= 4.5 V
1.2
60
60
10 000
0.015
0.012
0.009
0.006
0.003
0.000
8000
6000
4000
2000
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
= 25 A
= 4.5 V
3
V
V
T
DS
0
2
GS
C
J
oss
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
6
C
50
iss
4
Vishay Siliconix
9
75
I
D
Si4862DY
= 25 A
www.vishay.com
100
6
12
125
150
15
8
3