BSS192 T/R NXP Semiconductors, BSS192 T/R Datasheet - Page 3

• Manufacturer Part Number: BSS192 T/R
• Description: MOSFET TAPE-7 MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BSS192 T/R

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 240 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.2 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Fall Time: 12 ns
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 1000 mW
• Rise Time: 12 ns
• Factory Pack Quantity: 1000
• Part # Aliases: BSS192,115

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a ceramic substrate; area 2.5 cm
THERMAL CHARACTERISTICS
Note
1. Device mounted on a ceramic substrate; area 2.5 cm
CHARACTERISTICS
T
2002 May 22
V
V
I
I
P
T
T
R
V
V
I
I
R
C
C
C
Switching times (see Figs 2 and 3)
t
t
D
DM
j
DSS
GSS
on
off
SYMBOL
SYMBOL
SYMBOL
stg
j
y
DS
GSO
tot
(BR)DSS
GSth
th j-a
= 25 C unless otherwise specified.
DSon
iss
oss
rss
P-channel enhancement mode
vertical D-MOS transistor
fs
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
forward transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
turn-off time
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to ambient
PARAMETER
PARAMETER
PARAMETER
V
V
V
V
V
V
V
V
V
V
V
I
V
I
D
D
GS
GS
GS
GS
DS
GS
DS
GS
GS
GS
GS
GS
= 250 mA
= 250 mA
= 0; V
= 25 V; I
= 0; I
= V
= 0; V
= 0.2 V; V
= 10 V; I
= 0; V
= 0; V
= 0; V
= 0 to 10 V; V
= 10 to 0 V; V
2
2
; thickness 0.7 mm.
; thickness 0.7 mm.
DS
3
open drain
T
note 1
D
; I
DS
GS
DS
DS
DS
amb
CONDITIONS
= 10 A
D
= 60 V
= 20 V
= 25 V; f = 1 MHz
= 25 V; f = 1 MHz
= 25 V; f = 1 MHz
= 1 mA
D
D
DS
= 200 mA
CONDITIONS
CONDITIONS
= 200 mA
25 C; note 1
= 200 V
DD
DD
= 50 V;
= 50 V;
60
MIN.
65
240
0.8
MIN.
VALUE
125
10
200
55
20
5
5
20
TYP.
Product specification
0.1
1
+150
150
240
20
200
600
MAX.
BSS192
12
90
30
15
10
30
MAX. UNIT
2.8
200
60
100
UNIT
K/W
V
V
mA
mA
W
C
C
UNIT
V
V
nA
nA
mS
pF
pF
pF
ns
ns
A