VS-25RIA40 Vishay Semiconductors, VS-25RIA40 Datasheet - Page 6

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VS-25RIA40

Manufacturer Part Number
VS-25RIA40
Description
SCRs 400 Volt 25 Amp
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-25RIA40

Product Category
SCRs
Rohs
yes
Breakover Current Ibo Max
440 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
10 mA
Forward Voltage Drop
1.7 V
Gate Trigger Voltage (vgt)
2 V
Maximum Gate Peak Inverse Voltage
10 V
Gate Trigger Current (igt)
60 mA
Holding Current (ih Max)
130 mA
Mounting Style
Stud
Package / Case
TO-48
Factory Pack Quantity
100
25RIA Series
Vishay Semiconductors
www.vishay.com
6
100
0.01
0.1
0.1
10
0.001
1
0.001
1
a) Recommended load line for
Rectangular gate pulse
b) Recommended load line for
VGD
rated di/dt : 10V, 20ohms
Steady State Value
R
(DC Operation)
tr <=0.5 µs, tp >= 6 µs
<=30% rated di/dt : 10V, 65ohms
tr<=1 µs, tp >= 6 µs
thJC
IGD
For technical questions, contact: ind-modules@vishay.com
= 0.75 K/W
1000
Fig. 8 - Thermal Impedance Z
0.01
100
Fig. 7 - Forward Voltage Drop Characteristics
10
1
0.5
0.01
Medium Power Thyristors
25RIA Series
Instantaneous On-state Voltage (V)
(Stud Version), 25 A
Fig. 9 - Gate Characteristics
Instantaneous Gate Current (A)
Square Wave Pulse Duration (s)
(b)
1
0.1
T = 25°C
T = 125°C
J
J
1.5
(a)
25RIA Series Frequency Limited by PG(AV)
0.1
thJC
1
25RIA Series
2
Characteristics
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 60W, tp = 1ms
2.5
1
10
(1)
(2)
(3)
(4)
100
10
Document Number: 93701
Revision: 19-Sep-08

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