VS-25RIA40 Vishay Semiconductors, VS-25RIA40 Datasheet - Page 5

• Manufacturer Part Number: VS-25RIA40
• Description: SCRs 400 Volt 25 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-25RIA40

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 440 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 10 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 60 mA
• Holding Current (ih Max): 130 mA
• Mounting Style: Stud
• Package / Case: TO-48
• Factory Pack Quantity: 100

Document Number: 93701
Revision: 19-Sep-08
Fig. 5 - Maximum Non-Repetitive Surge Current
Number Of Equal Amplitude Half Cycle Current Pulses (N)
375
350
325
300
275
250
225
200
175
1
25RIA Series
Rated V
At Any Rated Load Condition And With
RRM
45
40
35
30
25
20
15
10
60
55
50
45
40
35
30
25
20
15
10
5
0
5
0
0
0
Applied Following Surge.
RMS Limit
RMS Limit
10
5
180°
120°
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Average On-state Current (A)
5
180°
120°
90°
60°
30°
Average On-state Current (A)
Initial T = 125°C
90°
60°
30°
DC
For technical questions, contact: [e-mail]
10
10
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15
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Medium Power Thyristors
15
20
100
Conduction Angle
25RIA Series
T = 125°C
25RIA Series
T = 125°C
Conduction Period
(Stud Version), 25 A
J
J
25
20
30
25
35
30
40
0
0
Maximum Allowable Ambient Temperature (°C)
Maximum Allowable Ambient Temperature (°C)
25
25
50
50
Fig. 6 - Maximum Non-Repetitive Surge Current
450
425
400
375
350
325
300
275
250
225
200
175
150
0.01
75
75
25RIA Series
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
Versus Pulse Train Duration. Control
100
100
Vishay Semiconductors
Pulse Train Duration (s)
125
125
Rated V
0.1
No Voltage Reapplied
25RIA Series
Initial T = 125°C
RRM
Reapplied
J
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