SiHB30N60E-E3 Vishay/Siliconix, SiHB30N60E-E3 Datasheet - Page 7
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SiHB30N60E-E3
Manufacturer Part Number
SiHB30N60E-E3
Description
MOSFET N-Channel 600V
Manufacturer
Vishay/Siliconix
Datasheet
1.SIHB30N60E-GE3.pdf
(9 pages)
Specifications of SiHB30N60E-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
29 A
Resistance Drain-source Rds (on)
125 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
D2PAK-3
Forward Transconductance Gfs (max / Min)
5.4 S
Gate Charge Qg
85 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
250 W
TO-263AB (HIGH VOLTAGE)
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
outmost extremes of the plastic body at datum A.
DIM.
A1
b1
b2
b3
c1
c2
A
D
b
c
4
(Datum A)
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.38
L1
L2
D
MILLIMETERS
B
B
2 x e
Lead tip
1
3
B
B
MAX.
4
4.83
0.25
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
E
2
C
4
3
C
2 x b
2 x b2
0.010
A
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.330
H
MIN.
5
M
INCHES
A
Plating
M
(c)
B
Section B - B and C - C
Detail A
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
Scale: none
b1, b3
(b, b2)
5
± 0.004
c
A
c1
c2
Base
metal
M
B
5
B
A
A
DIM.
D1
E1
L1
L2
L3
L4
H
E
e
L
0° to 8°
L3
Gauge
plane
14.61
MIN.
6.86
9.65
6.22
1.78
4.78
MILLIMETERS
-
-
Package Information
2.54 BSC
0.25 BSC
Rotated 90° CW
L
View A - A
scale 8:1
Detail “A”
L4
E1
E
MAX.
10.67
15.88
2.79
1.65
1.78
5.28
-
-
D1
Vishay Siliconix
4
H
A1
4
0.270
0.380
0.245
0.575
0.070
0.188
MIN.
B
-
-
0.100 BSC
0.010 BSC
Seating plane
INCHES
www.vishay.com
MAX.
0.420
0.625
0.110
0.066
0.070
0.208
-
-
1