PSMN009-100B /T3 NXP Semiconductors, PSMN009-100B /T3 Datasheet - Page 8

• Manufacturer Part Number: PSMN009-100B /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN009-100B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 0.0088 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 43 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 230 W
• Rise Time: 59 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 120 ns
• Part # Aliases: PSMN009-100B,118

NXP Semiconductors
PSMN009-100B_2
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
V
(mΩ)
(V)
GS
DSon
12.5
10
15
7.5
10
8
6
4
2
0
5
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
5 V
50
50
100
100
5.5 V
150
150
V
10 V
GS
Q
I
G
D
= 6 V
(nC)
(A)
03ai03
03ai08
20 V
8 V
200
200
Rev. 02 — 6 July 2009
N-channel TrenchMOS SiliconMAX standard level FET
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
a
5
4
3
2
3
2
1
0
10
-60
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
−1
0
1
PSMN009-100B
60
10
120
© NXP B.V. 2009. All rights reserved.
V
DS
03aa29
T
j
( ° C)
(V)
C
C
03ai07
C
iss
oss
rss
180
10
2
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