SI3443DV-T1-E3 Vishay/Siliconix, SI3443DV-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI3443DV-T1-E3
• Description: MOSFET 20V 4.4A 2W
• Manufacturer: Vishay/Siliconix

Specifications of SI3443DV-T1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4 A
• Resistance Drain-source Rds (on): 0.065 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SuperSOT-6
• Fall Time: 40 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.6 W
• Rise Time: 32 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 57 ns
• Part # Aliases: SI3443DV-E3

Document Number: 70192
S-49525—Rev. C, 06-Oct-97
0.14
0.12
0.10
0.08
0.06
0.04
0.02
20
16
12
8
4
0
0
5
4
3
2
1
0
0
0
0
V
I
D
DS
= 4 A
On-Resistance vs. Drain Current
= 10 V
1
V
4
DS
2
Q
V
Output Characteristics
GS
g
– Drain-to-Source Voltage (V)
I
D
– Total Gate Charge (nC)
= 2.5 V
V
– Drain Current (A)
Gate Charge
GS
2
8
= 4.5, 4, 3.5, 3 V
4
2.5 V
12
3
1.5 V
V
2 V
GS
6
16
4
= 4.5 V
20
5
8
1200
1000
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
0
–50
0
0
C
On-Resistance vs. Junction Temperature
rss
V
–25
I
D
GS
0.5
= 4 A
V
V
= 4.5 V
4
DS
GS
Transfer Characteristics
0
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
C
T
oss
1.0
J
www.vishay.com FaxBack 408-970-5600
– Junction Temperature ( C)
Capacitance
25
C
8
iss
Vishay Siliconix
1.5
50
T
12
C
25 C
75
= –55 C
2.0
Si3442DV
100
16
2.5
125
125 C
150
3.0
20
2-3