BUK7628-100A /T3 NXP Semiconductors, BUK7628-100A /T3 Datasheet - Page 7

• Manufacturer Part Number: BUK7628-100A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7628-100A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 47 A
• Resistance Drain-source Rds (on): 0.028 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 45 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 166 W
• Rise Time: 70 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 83 ns
• Part # Aliases: BUK7628-100A,118

NXP Semiconductors
BUK7628-100A
Product data sheet
Fig 7.
Fig 9.
Fig 11. Forward transconductance as a function of
R
(mΩ)
DS(on)
(A)
g
(S)
I
D
fs
200
160
120
80
40
31
27
23
19
15
50
40
30
20
10
0
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
drain current; typical values
T
Output characteristics: drain current as a
T
Drain-source on-state resistance as a function
V
0
5
0
j
j
DS
= 25 °C
= 25 °C; I
V
GS (V)
> I
D
20
2
7
= 20
13.5
10.0
x R
9.0
8.0
7.5
D
DSon
= 25 A
40
4
9
11
60
6
13
80
All information provided in this document is subject to legal disclaimers.
8
7.0
6.5
6.0
5.5
5.0
4.5
003aaf157
V
003aaf159
V
003aaf161
I
DS
GS
D
(A)
(V)
(V)
100
10
15
Rev. 2 — 26 April 2011
Fig 8.
Fig 10. Transfer characteristics: drain current as a
Fig 12. Normalized drain-source on-state resistance
R
(mΩ)
DS(on)
(A)
I
a
D
100
2.0
1.5
1.0
0.5
65
55
45
35
25
15
80
60
40
20
0
0
−100
of drain current; typical values
function of gate-source voltage; typical values
factor as a function of junction temperature
T
Drain-source on-state resistance as a function
V
5
0
j
DS
N-channel TrenchMOS standard level FET
= 25 °C
> I
D
x R
2
5.5
DSon
45
0
T
j
BUK7628-100A
= 175 °C
6.0
4
100
85
T
6.5
j
= 25 °C
V
7.0
7.5
8.0
6
GS
© NXP B.V. 2011. All rights reserved.
T
I
D
j
V
(V) = 10
(°C)
003aaf158
003aaf160
003aaf162
(A)
GS
(V)
125
200
8
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