BSP126 /T3 NXP Semiconductors, BSP126 /T3 Datasheet - Page 3

• Manufacturer Part Number: BSP126 /T3
• Description: MOSFET TAPE13 MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BSP126 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.375 A
• Configuration: Single Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 130 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1500 mW
• Rise Time: 130 ns
• Factory Pack Quantity: 4000
• Typical Turn-off Delay Time: 400 ns
• Part # Aliases: BSP126,135

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a 40
CHARACTERISTICS
T
2002 Feb 19
R
V
I
V
R
I
C
C
C
Switching times (see Figs 2 and 3)
t
t
j
GSS
DSS
on
off
(BR)DSS
GSth
Y
th j-a
= 25 C unless otherwise specified.
DSon
iss
oss
rss
N-channel enhancement mode
vertical D-MOS transistor
SYMBOL
SYMBOL
fs
drain-source breakdown voltage
gate-source leakage current
gate-source threshold voltage
drain-source on-state resistance
drain-source leakage current
transfer admittance
input capacitance
output capacitance
feedback capacitance
turn-on time
turn-off time
thermal resistance from junction to ambient; note 1
PARAMETER
40
1.5 mm epoxy printed-circuit board; mounting pad for the drain tab minimum 6 cm
PARAMETER
I
V
I
I
I
V
I
V
V
V
I
V
I
V
D
D
D
D
D
D
D
GS
DS
DS
DS
DS
GS
GS
= 10 A; V
= 1 mA; V
= 20 mA; V
= 300 mA; V
= 300 mA; V
= 250 mA; V
= 250 mA; V
3
= 200 V; V
= 25 V; V
= 25 V; V
= 25 V; V
= 20 V; V
= 0 to 10 V
= 10 to 0 V
CONDITIONS
DS
GS
GS
GS
GS
GS
GS
DS
DD
DD
DS
GS
= V
= 0
= 2.4 V
= 0; f = 1 MHz
= 0; f = 1 MHz
= 0; f = 1 MHz
= 0
= 10 V
= 25 V
= 50 V;
= 50 V;
= 0
GS
250
0.8
200
MIN.
VALUE
83.3
2.8
600
100
21
10
6
47
Product specification
TYP. MAX. UNIT
BSP126
2
7.5
5
1
120
30
15
10
60
100 nA
UNIT
K/W
V
V
mS
pF
pF
pF
ns
ns
A
2
.