BSH103 /T3 NXP Semiconductors, BSH103 /T3 Datasheet - Page 4

• Manufacturer Part Number: BSH103 /T3
• Description: MOSFET TAPE13 MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BSH103 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.85 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Fall Time: 3.5 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 3.5 ns
• Factory Pack Quantity: 10000
• Typical Turn-off Delay Time: 20 ns
• Part # Aliases: BSH103,235

Philips Semiconductors
THERMAL CHARACTERISTICS
1998 Feb 11
handbook, full pagewidth
R
SYMBOL
th j-s
N-channel enhancement mode
MOS transistor
Fig.4
R th j-s
(K/W)
10
10
10
10
1
3
2
Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
6
thermal resistance from junction to soldering point
0.75
0.33
0.05
0.02
0.01
= 1
0.5
0.2
0.1
10
0
5
10
PARAMETER
4
10
4
3
10
2
P
10
t p
VALUE
1
140
T
Product specification
t p (s)
=
t p
T
t
BSH103
MBK503
UNIT
1
K/W