IPU49CN10N G Infineon Technologies, IPU49CN10N G Datasheet
IPU49CN10N G
Manufacturer Part Number
IPU49CN10N G
Description
MOSFET N-CH 100V 20A
Manufacturer
Infineon Technologies
Datasheet
1.IPU49CN10N_G.pdf
(12 pages)
Specifications of IPU49CN10N G
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Resistance Drain-source Rds (on)
49 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-251
Fall Time
3 ns
Forward Transconductance Gfs (max / Min)
21 S / 11 S
Minimum Operating Temperature
- 55 C
Power Dissipation
44 W
Rise Time
4 ns
Factory Pack Quantity
1500
Typical Turn-off Delay Time
14 ns
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