SI4825DY-E3 Vishay/Siliconix, SI4825DY-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4825DY-E3
• Description: MOSFET 30V 11.5A 3W
• Manufacturer: Vishay/Siliconix

Specifications of SI4825DY-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 8.1 A
• Resistance Drain-source Rds (on): 14 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 13 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.5 W
• Rise Time: 13 ns
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 97 ns

Si4825DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71291.
www.vishay.com
4
- 0.2
- 0.4
1.0
0.8
0.6
0.4
0.2
0.0
0.01
0.01
0.1
- 50
0.1
2
1
2
1
10 -
10 -
Duty Cycle = 0.5
0.05
0.05
0.2
4
4
0.1
0.02
0.02
Duty Cycle = 0.5
- 25
0.2
0.1
Single Pulse
0
Threshold Voltage
T
J
- Temperature (°C)
10 -
25
3
Single Pulse
50
10 -
I
D
3
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
Normalized Thermal Transient Impedance, Junction-to-Foot
10 -
100
2
125
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10 -
150
2
10 -
1
50
40
30
20
10
10 -
0
1
10 -
1
2
Single Pulse Power, Junction-to-Ambient
10 -
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
-
Time (s)
T
t
1
A
1
S09-0868-Rev. D, 18-May-09
= P
t
2
DM
Document Number: 71291
Z
10
thJA
thJA
100
t
t
1
2
(t)
= 68 °C/W
100
600
10
600