SI4412DY-E3 Vishay/Siliconix, SI4412DY-E3 Datasheet - Page 7

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SI4412DY-E3

Manufacturer Part Number
SI4412DY-E3
Description
MOSFET 30V 7A 2.5W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI4412DY-E3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A
Resistance Drain-source Rds (on)
28 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
19 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
2.5 W
Rise Time
12 ns
Typical Turn-off Delay Time
38 ns
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
www.vishay.com
22
Return to Index
Return to Index
(0.559)
0.022
Recommended Minimum Pads
Dimensions in Inches/(mm)
(4.369)
0.172
(1.270)
(0.711)
0.050
0.028
Document Number: 72606
Revision: 21-Jan-08

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