IPD30N08S2L21 Infineon Technologies

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IPD30N08S2L21

Manufacturer Part Number

IPD30N08S2L21

Description

MOSFET

Manufacturer

Infineon Technologies

Specifications of IPD30N08S2L21

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

75 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

30 A

Resistance Drain-source Rds (on)

20.5 mOhms

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

TO-252

Fall Time

11 ns

Minimum Operating Temperature

- 55 C

Power Dissipation

136 W

Rise Time

30 ns

Factory Pack Quantity

2500

Typical Turn-off Delay Time

44 ns

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